Development of growth strategies to fabricate wide band gap ferromagnetic semiconductors for spin electronics applications

Funding: 2004: $98,000
2005: $98,000
2006: $98,000

Project Member(s): Phillips, M.

Funding or Partner Organisation: Australian Research Council (Other funds for ARC projects)
Australian Research Council (ARC Discovery Projects)

Start year: 2004

Summary: Spin Electronics technology will enable a revolutionary class of electronic devices. Gallium nitride (GaN) containing transition metals (TM) (eg Mn, Ni and Fe) is a very promising dilute magnetic semiconductor for practical spintronics applications as this material exhibits magnetic behaviour above room temperature. However, electronic and magnetic properties of this new class of semiconductors have not yet been optimised. This project aims to develop and test a new growth strategy, known as the co-doping method for the fabrication of high quality TM doped GaN. A broad range of complementary advanced spectroscopic techniques will be used to evaluate and refine this new fabrication method.''

Keywords: wide bandgap semiconductors ferromagnetic semiconductors spin electronics cathodoluminescence optical spectroscopy defect structure

FOR Codes: Materials Engineering not elsewhere classified, Nanotechnology, Physical sciences, Other, Nanotechnology not elsewhere classified, Expanding Knowledge in the Physical Sciences, Construction Materials Performance and Processes not elsewhere classified, Materials engineering not elsewhere classified , Glass materials

Acknowledgement of Country

UTS acknowledges the Gadigal people of the Eora Nation, the Boorooberongal people of the Dharug Nation, the Bidiagal people and the Gamaygal people, upon whose ancestral lands our university stands. We would also like to pay respect to the Elders both past and present, acknowledging them as the traditional custodians of knowledge for these lands.