Co-doping and transition metal doping of Gallium Nitride
Funding: 2003: $10,200
Project Member(s): Phillips, M.
Funding or Partner Organisation: Australian Research Council (ARC Linkage International)
Start year: 2003
Summary: Spintronics is poised to create a new paradigm in device electronics. Gallium nitride (GaN) containing trace amounts of transition metals (such as Fe,Ni) is a promising dilute magnetic semiconductor for spintronics as this material exhibits magnetic behaviour above room temperature. However, the electronic and magnetic properties of these GaN-based semiconductors have not been optimized, as yet. This project aims to establish and test a new growth strategy, know as the co-doping method, for the fabricate of high quality transition metal doped GaN. A broad range of complementary spectroscopic techniques will be used to refine this new fabrication technique.
Keywords: Gallium Nitride, Semiconductors, Spectroscopy, Spintronics, Defects,
FOR Codes: Materials Engineering not elsewhere classified, Quantum Optics and Lasers, Physical sciences, Quantum Optics, Expanding Knowledge in the Physical Sciences