Electron beam induced etching and deposition

Project Member(s): Ford, M., Arnold, M., Lobo, C.

Funding or Partner Organisation: National Computational Infrastructure National Facility (National Computational Infrastructure)

Start year: 2015

Summary: Semiconductors (and other important device materials) are commonly grown by chemical reaction o removes the desired material from the surface. An electron beam focused onto the surface can dissoc control the growth process. If an electron microscope is used structures can be grown with extreme s simulate electron-beam induced deposition and etching using a combination of continuum rate equa the intended outcomes of understanding the underlying microscopic mechanisms and ultimately to o complementary experimental work.

FOR Codes: Materials Engineering not elsewhere classified, Condensed Matter Modelling and Density Functional Theory, Expanding Knowledge in the Physical Sciences, Expanding Knowledge in the Chemical Sciences

Acknowledgement of Country

UTS acknowledges the Gadigal people of the Eora Nation, the Boorooberongal people of the Dharug Nation, the Bidiagal people and the Gamaygal people, upon whose ancestral lands our university stands. We would also like to pay respect to the Elders both past and present, acknowledging them as the traditional custodians of knowledge for these lands.