Development of low cost, high quality InGaN photovoltaic devices

Project Member(s): Ton-That, C.

Funding or Partner Organisation: Department of Industry, Innovation and Science (Department of Industry Partnership Fund)

Start year: 2014

Summary: This project aims to develop a collaborative university-industry partnership between University of Technology Sydney (UTS, Australia) and Nanovation (French SME). The project concerns a novel approach to the development of InGaN-based photovoltaics (PV). InGaN PV is a very promising renewable energy technology based on the unparalleled absorption of the solar spectrum, which can be obtained by red-shifting the GaN bandgap (3.4eV) through alloying with In. We will develop new processing techniques to fabricate low cost, high quality InGaN to facilitate the development of inexpensive PV devices.

Keywords: Photovoltaics, light absorption

FOR Codes: Materials Engineering not elsewhere classified, Expanding Knowledge in Technology, Nanoscale Characterisation, Materials engineering not elsewhere classified , EXPANDING KNOWLEDGE

Acknowledgement of Country

UTS acknowledges the Gadigal people of the Eora Nation, the Boorooberongal people of the Dharug Nation, the Bidiagal people and the Gamaygal people, upon whose ancestral lands our university stands. We would also like to pay respect to the Elders both past and present, acknowledging them as the traditional custodians of knowledge for these lands.