Ageron, M, Albert, A, Barvich, T, Beaumont, W, Beckers, T, Bernier, K, Blüm, P, Bouhali, O, Boulogne, I, Bouvet, D, Brom, JM, Charles, F, Coffin, J, Contardo, D, Daubie, E, Didierjean, F, Erdmann, M, De Lentdecker, G, Devroede, O, De Troy, J, Ernenwein, JP, Fahrer, M, Flügge, G, Fontaine, JC, Geist, W, Goerlach, U, Gottschalk, M, Helleboid, JM, Huss, D, Iacopi, F, Kärcher, K, Kühn, F, Juillot, P, Lounis, A, Maazouzi, C, Macke, D, Martin, C, Mirabito, L, Moreau, S, Müller, T, Neuberger, D, Nowack, A, Perries, S, Ripp-Baudot, I, Röderer, F, Schulte, R, Shekhtman, L, Simonis, HJ, Struczinski, W, Tatarinov, A, Thümmel, WH, Udo, F, Van Doninck, W, Van Dyck, C, Vander Velde, C, Vanlaer, P, Van Lancker, L, Weiler, T, Zander, A, Zghiche, A & Zhukov, V 2001, 'Robustness test of a system of MSGC+GEM detectors at the cyclotron facility of the Paul Scherrer institute', Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, vol. 471, no. 3, pp. 380-391.
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Alshahateet, SF, Bishop, R, Craig, DC, Scudder, ML & Ung, AT 2001, 'Pseudopolymorphic clathrate structures formed by an alicyclic dialcohol inclusion host', STRUCTURAL CHEMISTRY, vol. 12, no. 3-4, pp. 251-257.
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Balzani, V, Credi, A, Langford, SJ, Prodi, A, Stoddart, JF & Venturi, M 2001, 'Spectroscopic and Electrochemical Properties of Catenanes Containing the 2,7-Diazapyrenium Unit', Supramolecular Chemistry, vol. 13, no. 2, pp. 303-311.
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Biggs, T, Cornish, LA, Witcomb, MJ & Cortie, MB 2001, 'The effect of nickel on the martensitic-type transformations Of Pt3Al and TiPt', JOURNAL DE PHYSIQUE IV, vol. 11, no. PR8, pp. 493-498.
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The effect of nickel on two classes of martensitic-type transformations in platinum systems has been studied. The first transformation is Ll[2] to DO[c]' in the Pt3Al system and the second is B2 to B 19 in the TiPt system. The microstructures after transformation in the two systems are very different. The product of the Pt[3]Al transformation has a twinned microstructure, typical of cubic-to-tetragonal transformations. The product of the TiPt transformation is lath-like, although the morphology can be altered using heat treatments. The parent phase in the TiPt system is not retained at room temperature, whereas the parent phase in the Pt[3]Al transformation can be stabilised to room temperature. A great variation in hardness and transformation temperature is seen in each system as the composition is varied about the stoichiometric ratio, which has the lowest hardness. The Pt[3]Al transformation temperature has been reported to range from around room temperature to 1000°C. The TiPt transformation temperature can range from 1000 to 1080°C. The effect of nickel additions on these alloys also has a marked effect on the parent and product phase stability, and hence the microstructure and resulting hardness. The effect on the Pt[3]Al phase is complex, as nickel appears to stabilise the parent phase. The hardness varied in the region of 350 to 500 HV[10]. For the TiPt phase, the hardness values were generally found to increase with the nickel additions increasing from 250 to about 600 HV[10]. The addition of 20 at.% nickel decreases the transformation temperature from around 1000°C to about 600°C.
Biggs, T, Cortie, MB, Witcomb, MJ & Cornish, LA 2001, 'Martensitic transformations, microstructure, and mechanical workability of TiPt', METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, vol. 32, no. 8, pp. 1881-1886.
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Bond, AM, Ghiggino, KP, Hogan, CF, Hutchison, JA, Langford, SJ, Lygris, E & Paddon-Row, MN 2001, '', Australian Journal of Chemistry, vol. 54, no. 12, pp. 735-735.
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Buyanova, IA, Chen, WM, Goldys, EM, Phillips, MR, Xin, HP & Tu, CW 2001, 'Strain relaxation in GaNxP1-x alloy: effect on optical properties', PHYSICA B-CONDENSED MATTER, vol. 308, pp. 106-109.
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By using scanning electron microscopy and cathodoluminescence (CL), a decrease in radiative efficiency of GaNP alloy with increasing N content is seen due to the formation of structural defects. The defect formation is attributed to relaxation of tensile strain in the GaNP layer, which is lattice mismatched to GaP substrate. Several types of extended defects including dislocations, microcracks and pits are revealed in partly relaxed GaNxP1-x epilayers with x≥1.9%, whereas coherently strained layers exhibit high crystalline quality for x up to 4%. According to the CL measurements, all extended defects act as competing, non-radiative channels leading to the observed strong decrease in the radiative efficiency. From CL mapping experiments, non-uniformity of strain distribution around the extended defects is partly responsible for the broadening of the photoluminescence (PL) spectra recorded in the macro-PL experiments. © 2001 Elsevier Science B.V. All rights reserved.
Cooper, R, Smith, KL, Colella, M, Vance, ER & Phillips, M 2001, 'Optical emission due to ionic displacements in alkaline earth titanates', JOURNAL OF NUCLEAR MATERIALS, vol. 289, no. 1-2, pp. 199-203.
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Optical emission spectra in the 300-700 nm range were collected from single crystal CaTiO3, SrTiO3 and BaTiO3, and polycrystalline CaTiO3 samples, that were irradiated at room temperature using a Febetron 706 variable energy pulsed-electron-beam generator. The long-lived emissions (up to microseconds after the electron pulse) consist of broad (halfwidths to approximately 100 nm) bands centred around 380, 425, and 445 nm for CaTiO3, SrTiO3 and BaTiO3, respectively. These emission bands are similar to cathodoluminescence emissions from 25 keV electron irradiation attributed by others to direct conduction-valence band transitions in unreduced samples and oxygen vacancies in reduced samples. CaTiO3, SrTiO3 and BaTiO3 all have emission thresholds of 0.26±0.02 MeV. This corresponds to a threshold displacement energy for oxygen, Ed of 45±4 eV.
Danilatos, GD, Phillips, MR & Nailon, JV 2001, 'Electron beam current loss at the high-vacuum-high-pressure boundary in the environmental scanning electron microscope', MICROSCOPY AND MICROANALYSIS, vol. 7, no. 5, pp. 397-406.
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A significant loss in electron probe current can occur before the electron beam enters the specimen chamber of an environmental scanning electron microscope (ESEM). This loss results from electron scattering in a gaseous jet formed inside and downstream (above) the pressure-limiting aperture (PLA), which separates the high-pressure and high-vacuum regions of the microscope. The electron beam loss above the PLA has been calculated for three different ESEMs, each with a different PLA geometry: an ElectroScan E3, a Philips XL30 ESEM, and a prototype instrument. The mass thickness of gas above the PLA in each case has been determined by Monte Carlo simulation of the gas density variation in the gas jet. It has been found that the PLA configurations used in the commercial instruments produce considerable loss in the electron probe current that dramatically degrades their performance at high chamber pressure and low accelerating voltage. These detrimental effects are minimized in the prototype instrument, which has an optimized thin-foil PLA design.
Fallon, G, Langford, SJ & Lee, MA-P 2001, 'The Self-Assembly of a 3-Component Complex: Solid-State Structure of a 1 : 1 : 1 N,N′-Di(hydroxyethoxyethoxy)pyromellitic Diimide/Dinaphtho-18-crown-6/Water Complex', Chemistry Letters, vol. 30, no. 6, pp. 578-579.
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Abstract Dinaphtho-18-crown-6, which contains two π-electron rich dialkoxynaphthalene units, self-assembles with the π-electron deficient N,N′-di(hydroxyethoxyethoxy)pyromellitic diimide in solution to form 1:1 complexes that have the ability to undergo further self-organisation on crystallisation from MeCN/H2O to form linear arrays.
Fallon, GD, Lee, MA-P & Langford, SJ 2001, 'Bis(2-naphthoxy)[5,10,15,20-tetra-p-tolylporphyrinato]tin(IV)', Acta Crystallographica Section E Structure Reports Online, vol. 57, no. 12, pp. m564-m565.
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Gelhausen, O, Phillips, MR & Toth, M 2001, 'Depth-resolved cathodoluminescence microanalysis of near-edge emission in III-nitride thin films', JOURNAL OF APPLIED PHYSICS, vol. 89, no. 6, pp. 3535-3537.
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We describe an approach to assess the quality of III-nitride thin films using depth-resolved cathodoluminescence (CL) microanalysis. In this procedure, the depth-resolved peak shift due to self-absorption of the near-edge CL emission is calculated using Monte Carlo simulation techniques and compared with measured peak shift values. A discrepancy between the experimental and modeled data indicates the presence of an exciton peak shift due to strain, near-edge defects, and alloy fluctuation. Depth-resolved peak shift analysis of the near-edge CL from an undoped 700 nm thick Al0.057Ga0.943N film grown on a (0001) Al2O3 substrate is presented to demonstrate the utility of the method. © 2001 American Institute of Physics.
Godlewski, M, Goldys, EM, Butcher, KSA, Phillips, MR, Pakula, K & Baranowski, JM 2001, 'Cathodoluminescence investigations of interfaces in InGaN/GaN/sapphire structures', PHYSICA STATUS SOLIDI B-BASIC RESEARCH, vol. 228, no. 1, pp. 179-182.
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Godlewski, M, Goldys, EM, Butcher, KSA, Phillips, MR, Pakula, K & Baranowski, JM 2001, 'Cathodoluminescence Investigations of Interfaces in InGaN/GaN/Sapphire Structures', physica status solidi (b), vol. 228, no. 1, pp. 179-182.
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Scanning electron microscopy and cathodoluminescence (CL) in spot and depth-profiling modes were used to evaluate the in-plane and in-depth uniformity of light emission from InGaN/GaN quantum well (QW) structures. The structures were grown by MOCVD on sapphire with a low-temperature (LT) GaN buffer. Depth-profiling CL investigations were used to identify the observed CL emissions, which show a complicated in-depth evolution. The influence of a LT GaN buffer on the structural and optical properties of the GaN/sapphire interface is discussed.
Godlewski, M, Goldys, EM, Phillips, MR, Pakula, K & Baranowski, JM 2001, 'Cathodoluminescence and depth-profiling cathodoluminescence studies of interface properties in MOCVD-grown InGaN/GaN/sapphire structures: role of GaN buffer layer', APPLIED SURFACE SCIENCE, vol. 177, no. 1-2, pp. 22-31.
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We report the results of room-temperature cathodoluminescence (CL) and of scanning CL and electron (SEM) microscopy of GaN/InGaN structure with a single InGaN quantum well on top. The structures were grown by MOCVD on sapphire with low-temperature (LT) GaN buffer. Depth-profiling CL investigations were used to identify the observed CL emissions, which show a complicated in-depth evolution. The influence of a LT GaN buffer on structural and optical properties of GaN/sapphire interface in the structure is discussed. Our results show that inter-diffusion of Al from sapphire to the GaN buffer layer takes place. A gradual improvement of film quality with increasing distance from interface is demonstrated. © 2001 Elsevier Science B.V.
Godlewski, M, Mackowski, S, Karczewski, G, Goldys, EM & Phillips, MR 2001, 'Cathodoluminescence studies of self-organized CdTe/ZnTe quantum dot structure grown by MBE: in-plane and in-depth properties of the system', SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol. 16, no. 6, pp. 493-496.
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We report the results of low-temperature photoluminescence, room-temperature cathodoluminescence (CL) and scanning CL and electron microscopy of self-organized CdTe/ZnTe quantum dot (QD) structure. The in-depth profiling CL investigations were used to identify the microscopic origin of the CL emissions observed at 2.13,2.0-2.1 and 2.25 eV. In particular, we distinguish between CL emissions originating from the QD region of the structure and from the underlying buffer layers. Based on these measurements we assign the 2.13 eV CL band to the wetting layer and the 2.0-2.1 eV band to the QD emission. From the study of the in-plane and in-depth CL characteristics we demonstrate large in-plane fluctuations of the CL intensity and discuss their origin.
Guo, YG, Zhu, JG & Ramsden, VS 2001, 'Design and construction of a single phase claw pole permanent magnet motor using composite magnetic material', RENEWABLE ENERGY, vol. 22, no. 1-3, pp. 185-195.
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To investigate the application of composite magnetic material in electrical machines, a small single phase claw pole permanent magnet motor using this soft material as the stator iron core has been designed and constructed. Based on the three dimensional magnetic analysis the output performance, efficiency, power factor, output and cogging torque are computed.
Iacopi, F, Devroede, O, Pins, R, Van Hoof, R, Honore, M, Zhukov, V, Van Lancker, L, Van Doninck, W & Beyne, E 2001, 'An optimized process for the production of advanced planar wire grid plates as detectors for high energy physics experiments', SENSORS AND ACTUATORS A-PHYSICAL, vol. 93, no. 1, pp. 76-83.
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Kucheyev, SO, Bradby, JE, Williams, JS, Swain, MV, Toth, M, Phillips, MR & Jagadish, C 2001, 'Mechanical properties of As-grown and ion-beam-modified GaN films', Materials Research Society Symposium-Proceedings, vol. 649, pp. Q5.5.1-Q5.5.6.
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The deformation behavior of as-grown and ion-beam-modified wurtzite GaN films is studied by nanoindentation with a spherical indenter. Atomic force microscopy (AFM) and cathodoluminescence are used to characterize the deformation mode. No systematic dependence of the mechanical properties on the film thickness (at least for thicknesses from 1.8 to 4 μm) as well as on doping type is observed. Results strongly suggest that (i) slips is the major contributor to the plastic deformation of crystalline GaN and (ii) slip nucleation (rather than a phase transformation) is responsible for 'pop-in' events observed during loading. Indentation with an ∼ 4.2 μm radius spherical indenter at maximum loads up to 900 mN does not produce any cracking visible by AFM in crystalline GaN. Instead, under such loads, indentation results in a pronounced elevation of the material around the impression. Implantation disorder dramatically changes the deformation behavior of GaN. In particular, implantation-produced defects in crystalline GaN suppress (i) 'pop-in' events during loading, (ii) slip bands observed by AFM, and (iii) the plastic component of deformation. GaN amorphized by ion bombardment exhibits plastic flow even for very low loads. The values of hardness and elastic modulus of amorphous GaN are dramatically reduced compared to those of as-grown GaN. © 2001 Materials Research Society.
Kucheyev, SO, Toth, M, Phillips, MR, Williams, JS & Jagadish, C 2001, 'Effects of excitation density on cathodoluminescence from GaN', APPLIED PHYSICS LETTERS, vol. 79, no. 14, pp. 2154-2156.
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Wurtzite GaN epilayers are studied by cathodoluminescence (CL) spectroscopy. Results show that the intensities of donor-acceptor pair (DAP) and yellow luminescence (YL) peaks sublinearly depend on excitation density, presumably, due to saturation effects. The intensity of near-gap emission, however, exhibits a superlinear dependence on electron-beam excitation. In contrast to photoluminescence measurements, CL studies of GaN are usually performed in a regime with a strongly nonlinear dependence of luminescence intensities on excitation due to a large difference in carrier generation rates for these two techniques. As a result, the ratios of near-gap to YL and DAP emission intensities strongly depend on electron-beam current. Moreover, electron-beam spot size (i.e., beam focusing) dramatically affects CL intensity. An understanding of such saturation effects is necessary for a correct interpretation of CL spectra from GaN. © 2001 American Institute of Physics.
Kucheyev, SO, Toth, M, Phillips, MR, Williams, JS, Jagadish, C & Li, G 2001, 'Cathodoluminescence depth profiling of ion-implanted GaN', APPLIED PHYSICS LETTERS, vol. 78, no. 1, pp. 34-36.
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Cathodoluminescence (CL) spectroscopy shows that even relatively low-dose keV light-ion bombardment (corresponding to the generation of ∼5 × 1019 vacancies/cm3) of wurtzite GaN results in a dramatic quenching of visible CL emission. Postimplantation annealing at temperatures up to 1050°C generally causes a partial recovery of measured CL intensities. However, CL depth profiles indicate that, in most cases, such a recovery results from CL emission from virgin GaN, beyond the implanted layer due to a reduction in the extent of light absorption within the implanted layer. In this case, CL emission from the implanted layer remains completely quenched even after such an annealing. These results show that an understanding of the effects of ion bombardment and postimplantation annealing on luminescence generation and light absorption is required for a correct interpretation of luminescence spectra of GaN optically doped by keV ion implantation. © 2001 American Institute of Physics.
Levy, FC & Cortie, MB 2001, 'Body-centred tetragonal martensite formed from Au7Cu5Al4 beta phase', MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, vol. 303, no. 1-2, pp. 1-10.
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Malaun, M, Kowallick, R, McDonagh, AM, Marcaccio, M, Paul, RL, Asselberghs, I, Clays, K, Persoons, A, Bildstein, B, Fiorini, CL, Nunzi, J-M, Ward, MD & McCleverty, JA 2001, 'Donor–acceptor complexes incorporating ferrocenes: spectroelectrochemical characterisation, quadratic hyperpolarisabilities and the effects of oxidising and reducing agents', Journal of the Chemical Society, Dalton Transactions, vol. 20, no. 20, pp. 3025-3038.
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The donor-acceptor complexes [Fe(C5H5){C5H4QNHM(NO)(TpMe,Me)X}] {TpMe,Me= tris(3,5-dimethylpyrazolyl)borate; Q = nothing, M = Mo, X = Cl, Br, I; M = W, X = Cl; Q = C6H4, M = Mo, X = Cl, Br, I; M = W, X = Cl; Q = CHCHC6H4 or NNC6H4, M = Mo, X = Cl), which contain 16-valence electron metal nitrosyl centres, [Fe(C5H5){C5H4QpyMo(NO)(TpMe,Me)Cl}] (py = 4-pyridyl; Q = CHCH, CHCHCO, NCH and C6H4CHCH), [Fe(C5Me4H){C5H4CHCHpyMo(NO)(TpMe,Me)Cl}] and [Fe(C5Me4H)(C5Me4QpyZ)] {Q = CHCH or CHN, Z = Mo(NO)(TpMe,Me)Cl or W(CO)5; Q2,4-CHCH(C4H2S)CHCH, Z = W(CO)5 or Me+I}, some of which contain 17-valence electron molybdenum nitrosyl centres, and [Fe(C5Me4H){C5Me4CHCH(C4H2S)CHCHpy}], have been characterised electrochemically, by their electronic spectra, and spectroelectrochemically. Hyper-Rayleigh scattering was used to determine the first hyperpolarisability, , the data showing that (a) is dependent on the metal in the acceptor fragment, (b) increased when Cl or Br was replaced by I and (c) increased when the number of methyl groups on the cyclopentadienyl rings increased. The -values for comparable complexes containing {Mo(NO)(TpMe,Me)Cl} and {W(CO)5} moieties were similar. Chemical oxidation of the ferrocenyl or chemical reduction of the molybdenum nitrosyl acceptor fragments in selected complexes caused a reduction of between 25% and 100% in the NLO response. X-Ray structural studies of [Fe(C5H5){C5H4NHMo(NO)(TpMe,Me)Cl}] (P) and [Fe(C5Me4H){C5Me4CHCHpyMo(NO)(TpMe,Me)Cl}] (P) are reported.
McDonagh, AM, Ward, MD & McCleverty, JA 2001, 'Redox and UV/VIS/NIR spectroscopic properties of tris(pyrazolyl)borato–oxo–molybdenum(V) complexes with naphtholate and related co-ligands', New Journal of Chemistry, vol. 25, no. 10, pp. 1236-1243.
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A series of complexes has been prepared in which {(Tp*)MoV(O)Cl}+ termini [Tp*=tris(3,5-dimethylpyrazolyl) hydroborate] have been coordinated with ligands containing naphtholate binding sites. Mononuclear complexes, in which the sixth ligand is e.g. 1-naphtholate or 2-naphtholate, have been prepared; in addition some dinuclear complexes were also prepared based on bridging ligands containing either two naphtholate termini, or one naphtholate terminus and one phenolate terminus. The complexes have been studied by electrochemistry and UV/VIS/NIR spectroelectrochemistry to evaluate how the naphtholate donors affect the properties of the complexes compared to their known phenolate-based analogues. It was found that mononuclear complexes with phenolate, 1-naphtholate and 2-naphtholate ligands give significantly different electronic spectra in their oxidised [Mo(VI)] forms, with the characteristic phenolate → Mo(VI) LMCT transition being at much lower energy for the naphtholate complexes than the phenolate, an observation which is of significance for development of electrochromic near-IR dyes. In addition, the twist induced in some of the bridging ligands by the bulky naphtholate termini results in substantially decreased metal-metal electronic interactions compared to the equivalent phenolate-based complexes.
Ramsden, VS, Watterson, PA, Hunter, GP, Zhu, JG, Holliday, WM, Lovatt, HC, Wu, W, Kalan, BA, Collocott, SC, Dunlop, JB, Gwan, PB & Mecrow, BC 2001, 'High-performance electric machines for renewable energy generation and efficient drives', RENEWABLE ENERGY, vol. 22, no. 1-3, pp. 159-167.
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Wang, GX, Ahn, J-H, Lindsay, MJ, Sun, L, Bradhurst, DH, Dou, SX & Liu, HK 2001, 'Graphite–Tin composites as anode materials for lithium-ion batteries', Journal of Power Sources, vol. 97-98, pp. 211-215.
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Williams, DBG, Blann, K & Holzapfel, CW 2001, 'ARYL γ-KETOESTERS AS PRECURSORS FOR γ-BUTYROLACTONES IN SAMARIUM(II) IODIDE-MEDIATED REACTIONS', Synthetic Communications, vol. 31, no. 2, pp. 203-209.
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Various aryl γ-ketoesters were transformed into the corresponding substituted γ-lactones in good yield upon reaction with SmI . 2
Williams, DBG, Blann, K & Holzapfel, CW 2001, 'Observations on the samarium diiodide-promoted C–C fragmentation/ring expansion chemistry of some aliphatic 1,4-diketones', Journal of the Chemical Society, Perkin Transactions 1, no. 3, pp. 219-220.
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Godlewski, M, Ivanov, VY, Khachapuridze, A, Narkowicz, R & Phillips, MR 1970, '<title>Effects of localization in CdTe-based quantum well structures</title>', Optical Organic and Inorganic Materials, Advanced Optical Materials and Devices, SPIE, VILNIUS, LITHUANIA, pp. 86-91.
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Guo, YG & Zhu, JG 1970, 'Improved methods for force and torque calculation in electrical machines by 3D finite element analysis', ICEMS'2001. Proceedings of the Fifth International Conference on Electrical Machines and Systems (IEEE Cat. No.01EX501), ICEMS 2001. Proceedings of the Fifth International Conference on Electrical Machines and Systems, Int. Acad. Publishers, Shenyang China, pp. 1191-1194.
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Jin Jiang Zhong & Jian Guo Zhu 1970, 'Electromagnetic design of a 3D tester for magnetic properties of soft magnetic materials', ICEMS'2001. Proceedings of the Fifth International Conference on Electrical Machines and Systems (IEEE Cat. No.01EX501), ICEMS 2001. Proceedings of the Fifth International Conference on Electrical Machines and Systems, Int. Acad. Publishers, SHENYANG, PEOPLES R CHINA, pp. 392-395.
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Morgan, SW & Phillips, MR 1970, 'Time Dependent Study of the Positive ion Current in the Environmental Scanning Electron Microscope (ESEM)', Microscopy and Microanalysis, Microscopy & Microanalysis 2001, Oxford University Press (OUP), California, pp. 788-789.
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The Environmental Scanning Electron Microscope (ESEM) is capable of image generation in a gaseous environment at sample chamber pressures of up to 20 torr. in an ESEM, low energy secondary electrons emitted from a sample surface, by virtue of the primary electron beam, are accelerated towards the positively biased metallic ring (typically +30 to +550V) Gaseous Secondary Electron Detector (GSED). As these electrons accelerate towards the ring they undergo ionizing collisions with gas molecules producing positive ions and additional electrons known as environmental secondary electrons. The environmental electrons further ionize the gas on their way to the ring producing a cascade amplification of the original signal. The amplified signal induced in the ring is used to form an image. The electric field generated between the GSED ring and the grounded stage causes the positive ions produced in the cascade to drift towards the sample, effectively neutralizing negative charge build up on the surface of a non-conducting sample.
Phillips, MR, Griffin, B, Drouin, D, Nockolds, C & Remond, G 1970, 'X-Ray Microanalysis in the Environmental SEM Using Mapping and Fourier Deconvolution Techniques', Microscopy and Microanalysis, Microscopy & Microanalysis 2001, Oxford University Press (OUP), California, pp. 708-709.
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X-ray microanalysis of any type of specimen in its natural state without the use of conventional SEM specimen preparation techniques has immense potential in a wide range of scientific and industrial applications. This capability would be particularly useful in microanalysis applications where it is highly desirable to preserve the integrity of the specimen, for example in semiconductor failure analysis and forensic investigations. in principle, this X-ray microanalysis goal can be achieved in an environmental or variable pressure scanning electron microscope (VPSEM) because specimen charging and vacuum stability problems are negated by the presence of a gas in the specimen chamber. However, the accuracy and spatial resolution of X-ray microanalysis in the VPSEM is significantly degraded by the chamber gas as it scatters primary beam electrons, generating spurious X-rays far from the analysis point. to date, two different X-ray measurement strategies have been developed to facilitate X-ray microanalysis at high chamber pressure in the VPSEM.
Samoc, M, Humphrey, MG, Cifuentes, MP, McDonagh, AM, Powell, CE, Heath, GA & Luther-Davies, B 1970, 'Third-order optical nonlinearities of organometallics: influence of dendritic geometry on the nonlinear properties and electrochromic switching of nonlinear absorption', Linear and Nonlinear Optics of Organic Materials, International Symposium on Optical Science and Technology, SPIE, SAN DIEGO, CA, pp. 65-77.
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Waeterloos, JJ, Struyf, H, Van Aelst, J, Castillo, DW, Lucero, S, Caluwaerts, R, Alaerts, C, Mannaert, G, Boullart, W, Sleeckx, E, Schaekers, M, Tokel, Z, Vervoort, I, Steenbergen, J, Sijmus, B, Vos, I, Meuris, M, Iacopi, F, Donaton, RA, Van Hove, M, Vanhaelemeersch, S & Maex, K 1970, 'Integration feasibility of porous SiLK* semiconductor dielectric', Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461), Proceedings of the IEEE 2001 International Interconnect Technology Conference, IEEE, BURLINGAME, CA, pp. 253-254.
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